The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

4:45 PM - 5:00 PM

[20p-D103-14] Research on 3C-SiC nMOSFETs with NbNi silicide and its radiation hardness

〇(M2)Kohei Nagano1, Meguro Tatsuya1, Takeyama Akinori2, Makino Takahiro2, Ohshima Takeshi2, Tanaka Yasunori3, Kuroki Shin-Ichiro1 (1.RNBS Hiroshima Univ., 2.QST, 3.AIST)

Keywords:semiconductor, SiC