Analysis of conduction mechanism of leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

Hiroki Nemoto; Dai Okamoto; Mitsuru Sometani; Yuji Kiuchi; Tetsuo Hatakeyama; Shinsuke Harada; Noriyuki Iwamuro; Hiroshi Yano

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

4:30 PM - 4:45 PM

[20p-D103-13] Analysis of conduction mechanism of leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

〇(B)Hiroki Nemoto¹, Dai Okamoto¹, Mitsuru Sometani², Yuji Kiuchi², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ., 2.AIST)

Keywords:SiC, Leakage current

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