Hiroki Nemoto

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

4:30 PM - 4:45 PM

[20p-D103-13] Analysis of conduction mechanism of leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

〇(B)Hiroki Nemoto¹, Dai Okamoto¹, Mitsuru Sometani², Yuji Kiuchi², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ., 2.AIST)

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