Estimation of interface state density in SiC MOS structures from gate characteristics of MOSFETs at room temperature

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

2:00 PM - 2:15 PM

〇Koji Ito¹, Keita Tachiki¹, Takuma Kobayashi¹, Masahiro Horita¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, MOS