2018年第65回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10.4 半導体スピントロニクス・超伝導・強相関

[20p-D104-1~11] 10.4 半導体スピントロニクス・超伝導・強相関

2018年3月20日(火) 13:00 〜 16:00 D104 (56-104)

好田 誠(東北大)、ファム ナムハイ(東工大)

13:30 〜 13:45

[20p-D104-3] Effect of optical waveguide on photoluminescence polarization in layered material GaSe

〇(M1)Masaki Suzuki1、Makoto Kohda1,2、Shoichi Takasuna1、Shunichiro Matsuzaka3、Yohei Sato1、Tadao Tanabe1、Yutaka Oyama1、Junsaku Nitta1,2 (1.Tohoku Univ.、2.CSRN、3.Nanophoton Corp.)

キーワード:waveguide

Transition metal monochalcogenides (TMMs) such as GaSe and InSe show unique properties among layered material families. To functionalize GaSe for future optical and spintronic devices, resolving and controlling polarization in photoluminescence (PL) are indispensable. Recent developments in epitaxial growth and exfoliation techniques offer a large area 2D material for optical waveguide application, contributing to additional polarization control. In this research, we investigated the PL polarization of millimeter scale GaSe film with 100 nm and 150mm thicknesses and suggested that optical waveguide is significant in large 2D layered materials.The thin layer GaSe film of 100±7 nm thickness was exfoliated from the the bulk counterpart by scotch tape method and the thick layer one was cut from the bulk GaSe crystal.To resolve the polarization plane of the PL from the GaSe films, the linear polarizer set in front of the detector is rotated.The excitation wavelength is 561 nm (2.21eV) and the input power is varid from 0.1 to 1 mW.