[20p-D104-1~11] 10.4 Semiconductor spintronics, superconductor, multiferroics

[20p-D104-4] In-plane resonant spin-filtering with Rashba-Dresselhaus interaction

Yoshiaki Hashimoto¹, Xiaohan Yao², Yu Iwasaki¹, Taketomo Nakamura¹, 〇Shingo Katsumoto¹ (1.ISSP, Univ. Tokyo, 2.Beijin Univ.)

Keywords:spin-orbit interaction, heterostructure, resonant diode

In a double well structure with reverted oblique potentials, the sign of the Rashba interaction reverses. And with the Dresselhaus interaction, in-plane spin-filtering effect, which depends on the bias voltage is expected for the vertical transport. In the present study, we grew a single crystal beta-Fe film on such a double well structure and detected the filtering effect as magnetoresistance for in-plane magnetic field. The lineshape of the magnetoresistance is similar to that of anisotropic magnetoresistance (AMR) in ferromagnets. However the absolute value of the resistance and the dependence on the bias voltage distinguishes the present observation from ordinary AMR in the Fe film.