[20p-D104-1~11] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [20p-D104-3] Effect of optical waveguide on photoluminescence polarization in layered material GaSe

〇(M1)Masaki Suzuki¹、Makoto Kohda^1,2、Shoichi Takasuna¹、Shunichiro Matsuzaka³、Yohei Sato¹、Tadao Tanabe¹、Yutaka Oyama¹、Junsaku Nitta^1,2 (1.Tohoku Univ.、2.CSRN、3.Nanophoton Corp.)

キーワード：waveguide

Transition metal monochalcogenides (TMMs) such as GaSe and InSe show unique properties among layered material families. To functionalize GaSe for future optical and spintronic devices, resolving and controlling polarization in photoluminescence (PL) are indispensable. Recent developments in epitaxial growth and exfoliation techniques offer a large area 2D material for optical waveguide application, contributing to additional polarization control. In this research, we investigated the PL polarization of millimeter scale GaSe film with 100 nm and 150mm thicknesses and suggested that optical waveguide is significant in large 2D layered materials.The thin layer GaSe film of 100±7 nm thickness was exfoliated from the the bulk counterpart by scotch tape method and the thick layer one was cut from the bulk GaSe crystal.To resolve the polarization plane of the PL from the GaSe films, the linear polarizer set in front of the detector is rotated.The excitation wavelength is 561 nm (2.21eV) and the input power is varid from 0.1 to 1 mW.