The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

3:45 PM - 4:00 PM

[20p-E201-11] Crystal structure transformation of Fe3O4 from spinel type to rock salt type via ion irradiation

Yang Liu1, Yuki Hisamatsu1, Isao Harayama1, Sonia Sharmin1, Daiichiro Sekiba1, Daiki Oshima4, Takeshi Kato3, Satoshi Iwata4, Eiji Kita2, Hideto Yanagihara1 (1.Tsukuba Univ., 2.Ibaraki Colg., 3.Nagoya Univ., 4.Nagoya IMaSS)

Keywords:Thin film, Ion irradiation, Structure transformation

An interesting topic of recent study is how spinel materials, such as MgAl2O4, MgGa2O4 and MgIn2O41, are affected by ion implantation, a technique which can change a material’s fundamental properties. However, hardly any investigation has been carried out on irradiated spinel ferrite materials. In the previous study, we investigated the effect of Kr ion implantation on the epitaxial CoFe2O4 thin films, and found that the magnetization decreased due to ion irradiation causing a structural transformation from spinel to rock salt type. However, the mechanism of topotactic reaction in epitaxial films was not well explained. In this study, we focus on prototype spinel Fe3O4 thin films and investigate the structural transformation from spinel to rock salt via Kr ion implantation.