[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-3] Ge doping of α-Ga₂O₃ by HVPE

〇Yuichi Oshima¹, Katsuaki Kawara², Makoto Kasu³, Takashi Shinohe², Toshimi Hitora² (1.NIMS, 2.FLOSFIA, 3.Saga Univ.)

Keywords:Gallium oxide, HVPE, doping

We demonstrate n-type Ge doping control of α-Ga₂O₃ by HVPE. GeCl₄ was used as the dopant source. Ge concentration in the crystal increased proportionally with increasing GeCl₄ supply. The carrier mobility was excellent, i.e., μ = 28 cm²/Vs when n = 2.6 x 10¹⁹ cm^-3 at RT. As the result, very low resistivity as low as 8.6 mΩcm was achieved.