The 65h JSAP Spring Meeting, 2018

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

1:15 PM - 1:30 PM

△ [20p-E201-2] Fabrication of coherently grown α-Al2O3/Ga2O3 superlattices

〇Yuji Kato1, Masataka Imura2, Keiko Nakayama2, Masaki Takeguchi2, Takayoshi Ooshima1 (1.Saga Univ., 2.NIMS)

Keywords:Ga2O3, superlattice

The α- (Al x Ga 1-x) 2 O 3 mixed crystal system capable of fully solid-solubilization has a wide band gap control range of 5.3 - 8.8 eV, and is expected to be applied to quantum electronics utilizing heterostructures and superlattices. However, in the present state α-Ga 2 O 3 system, α-Fe 2 O 3 / Ga 2 O 3 multiple quantum well and α- (Al 0 .2 Ga 0 .8) 2 O 3 / (Al 0 .9 Ga 0 .1) 2 O 3 multilayer structure are only reported. Therefore, we report the preparation of α-Al 2 O 3 / Ga 2 O 3 superlattice composed of α-Al 2 O 3 and α-Ga 2 O 3 as the parent materials constituting the mixed crystal system.