The 65h JSAP Spring Meeting, 2018

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

1:45 PM - 2:00 PM

[20p-E201-4] Epitaxial Lateral Overgrowth of α-Ga2O3 by HVPE

〇Yuichi Oshima1, Katsuaki Kawara2, Riena Jinno3, Takashi Shinohe2, Toshimi Hitora2, Makoto Kasu4, Shizuo Fujita3 (1.NIMS, 2.FLOSFIA, 3.Kyoto Univ., 4.Saga Univ.)

Keywords:Gallium oxide, HVPE

We demonstrate epitaxial lateral overgrowth of α-Ga2O3 by HVPE. SiO2 mask was patterned on substrates by conventional photo lithography. TEM observation revealed that virtually no dislocatoin propagate into the wing region, and the ELO techniqe is promising for improving the crystal quality of α-Ga2O3.