Yuichi Oshima

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM

[20p-E201-3] Ge doping of α-Ga₂O₃ by HVPE

〇Yuichi Oshima¹, Katsuaki Kawara², Makoto Kasu³, Takashi Shinohe², Toshimi Hitora² (1.NIMS, 2.FLOSFIA, 3.Saga Univ.)

1:45 PM - 2:00 PM

[20p-E201-4] Epitaxial Lateral Overgrowth of α-Ga₂O₃ by HVPE

〇Yuichi Oshima¹, Katsuaki Kawara², Riena Jinno³, Takashi Shinohe², Toshimi Hitora², Makoto Kasu⁴, Shizuo Fujita³ (1.NIMS, 2.FLOSFIA, 3.Kyoto Univ., 4.Saga Univ.)

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