[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-9] Synthesis of Ga₂O₃: Co nanocrystals at normal temperature and air pressure

〇Akira Tsuno¹, Naoki Watanabe², Kenichi Shudo^1,2, Kohki Mukai^1,2 (1.Graduate School of Engineering, 2.College of Engineering Science Yokohama National Univ.)

Keywords:gallium oxide, wide gap semiconductor, nanocrystals

Ga₂O₃ crystals are usually synthesized at high temperature or high pressure. There is a research report that Ga₂O₃ is converted to P type by forming acicular nanocrystal. There is also a research report that the band gap of Ga₂O₃ can be controlled by adding Co. In this study, Ga₂O₃ crystal to which Co was added was synthesized at normal temperature and air pressure, and the basic physical properties of the produced nanocrystals were evaluated.