[20p-P4-1~40] 8 Plasma Electronics（Poster）

[20p-P4-5] Plasma enhanced chemical vapor deposition process using an ether as a source, monitored with IR spectroscopy

〇Masanori Shinohara¹, Taisuke Tominaga¹, Hayato Shimomura¹, Takeshi Ihara¹, Yoshihito Yagyu¹, Tamiko Ohshima¹, Hitoharu Kawasaki¹ (1.NIT Sasebo College)

Keywords:MIR-IRAS, ether, deposition process

In order to add new properties into amorphous carbon films, we want to use large-weight molecules, because we want molecular functions to be added to the films. In this study, we investigate surface reactions of PECVD with in-situ and real-time multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS), in case of using di-isopropylether ((iC₃H₇)₂O) as a source.This ether has a –C-O-C- structure and propyl groups. IR spectra showed that the film was deposited with sp³-CH_X components. It is suggested that the sp³-CH_X configurations reflect propyl groups of the source molecule. IR spectra also showed that C=O was formed in the film, which indicated that O of the source molecules was released from the molecules and attached to the film with the formation of C=O bonds.