[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-19] Investigation of high temperature N₂ annealing of AlN on 6-inch

〇Akira Mishima¹, Yuji Tomita¹, Yuya Yamaoka¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Hideto Miyake² (1.TNSC, 2.Mie Univ.)

Keywords:AlN

To realize high-performance, low-cost deep ultraviolet LEDs , high-quality AlN with a large diameter substrate is required for the underlying layers. Recently, an improvement in the crystallinity of an AlN buffer layer was achieved via high-temperature annealing under a N₂ gas atmosphere. In this study, we developed an annealing furnace for 6 inch wafers and used it to anneal AlN on a 6 inch c-plane sapphire substrate at a high temperature.