[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-2] Micro-Photoluminescence Mapping for Surface Plasmon Enhanced Emissions from Aluminum Coated InGaN/GaN QWs

〇(D)Kazutaka Tateishi¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹, Kaoru Tamada¹ (1.Kyushu Univ. IMCE, 2.Kyoto Univ. Engineering)

Keywords:InGaN/GaN QWs, surface plasmon, Aluminum

We reported the huge photoluminescence enhancement observed with Al coated InGaN/GaN quantum wells(QWs) and that the PL enhancement should be due to excitation efficiency improvement lead by surface plasmon (SP) on thermally deposited aluminum film. In this study, we will present about the effect, which was observed with PL mapping method, from SP on aluminum to the properties of QWs originated from partial In composition fluctuation, such as exciton localization and quantum confined Stark effect