[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-20] Evaluation of bulky AlN single crystal by using synchrotron X-ray topography, Raman mapping and etch pit method

〇Yongzhao Yao¹, Yukari Ishikawa¹, Yoshihiro Sugawara¹, Narihito Okada², Ryou Inomoto², Kazuyuki Tadatomo², Yumiko Takahashi³, Keiichi Hirano⁴ (1.JFCC, 2.Yamaguchi Univ., 3.Nihon Univ., 4.KEK)

Keywords:AlN, dislocation, X-ray topography

AlN is one of the promising semiconductor materials for next generation deep UV LED and high power density power-device. In this work, synchrotron X-ray topography, Raman mapping and etch pit method were applied to study crystal defects, especially, dislocation distribution in large sample area of AlN.