13:30 〜 15:30
▲ [20p-P6-27] Cathodoluminescence study on the stacking faults of m-plane GaN
キーワード：GaN, Stacking fault, Cathodoluminescence
GaN growth of non-c-plane orientations (e.g. a-plane, m-plane) attracted more and more attention due to the spontaneous polarization and an additional stress-induced piezoelectric field along the c-axis, which have negative impact on the performance of light emitting devices. Stacking faults (SFs) in GaN are considering as minor defects and not so detrimental for application of c-plane GaN. However, if non-c-plane GaN is applied, SFs should be taken into account for device fabrication. The characterization of SFs of a-plane GaN have been widely reported, but few in m-plane GaN.
In our study, we have characterized SFs in m-plane GaN by spatially resolved cathodoluminescence (CL) at low temperature (10 K) and high-resolution transmission electron microscope (HRTEM). The emissions of different type SFs and the recombination enhanced defect reaction (REDR) were observed. The emission energy of I1 type SFs is unique 3.43eV as well known, but that of I2 type SFs are varied at range of 3.38 to 3.39eV. This emission energy shift of I2 type SFs indicates the relatively complicated SFs structure.
In our study, we have characterized SFs in m-plane GaN by spatially resolved cathodoluminescence (CL) at low temperature (10 K) and high-resolution transmission electron microscope (HRTEM). The emissions of different type SFs and the recombination enhanced defect reaction (REDR) were observed. The emission energy of I1 type SFs is unique 3.43eV as well known, but that of I2 type SFs are varied at range of 3.38 to 3.39eV. This emission energy shift of I2 type SFs indicates the relatively complicated SFs structure.