GaN MOS-HEMTs through Al₂O₃ thickness variation

〇(M2)Shinsaku Kawabata¹, Joel Asubar¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Oral presentation
｜ 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

Wed. Sep 18, 2019 5:15 PM - 5:30 PM

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

〇(M2)Takashi Nishitani¹, Shunsuke Kamiya¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Oral presentation
｜ 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

Thu. Sep 19, 2019 11:30 AM - 11:45 AM

[19a-E301-8] GaN-on-GaN HEMTs with High Breakdown Critical Fields

〇(M2)Atsuki Aoai¹, Akio Yamamoto¹, Hirokuni Tokuda¹, Narihito Okada², Kazuyuki Tadatomo², Joel Asubar¹, Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Yamaguchi Univ.)

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

Oral presentation
｜ 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.)

Thu. Sep 19, 2019 11:45 AM - 12:00 PM

[19a-E301-9] Characterization of frequency in AlGaN/GaN MOS HEMTs

〇Takashi Ozawa¹, Joel Asubar¹, Hirokuni Tokuda¹, Yohei Yagishita², Yoichi Kawano², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Fujitsu Lab.)

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

Oral presentation
｜ 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.)

Presentation Search

△ [18p-N302-13] Threshold voltage control in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs through Al₂O₃ thickness variation

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[19a-E301-8] GaN-on-GaN HEMTs with High Breakdown Critical Fields

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

[19a-E301-9] Characterization of frequency in AlGaN/GaN MOS HEMTs

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

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△ [18p-N302-13] Threshold voltage control in normally-off Al2O3/AlGaN/GaN MOS-HEMTs through Al2O3 thickness variation

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[19a-E301-8] GaN-on-GaN HEMTs with High Breakdown Critical Fields

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

[19a-E301-9] Characterization of frequency in AlGaN/GaN MOS HEMTs

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

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△ [18p-N302-13] Threshold voltage control in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs through Al₂O₃ thickness variation