Masato Higashi

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

△ [20a-E301-11] Influence of ALD Precursor on Electrical Properties of Al₂O₃/AlGaN/GaN MIS Structure

〇(M2)Masato Higashi¹, Mutsunori Uenuma¹, Koji Yoshitsugu², Eiji Yagyu², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Mitsubishi Electric Corp.)