Takashi Tsukasaki

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 11:30 AM B31 (B31)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:00 AM - 9:15 AM

[18a-B31-1] Photoluminescence mechanism in Si doped GaAsN as a function of Si impurity concentration

〇Takashi Tsukasaki¹, Ren Hiyoshi¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)