Ryohei Sato

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

10:45 AM - 11:00 AM

[18a-C212-7] Numerical calculation of dislocation behavior in Si substrate during thermal process

〇Ryohei Sato¹, Toshihiko Takakura², Kazuo Ito², Takuya Saraya², Toshiro Hiramoto², Koichi Kakimoto^1,3, Shin-ichi Nisizawa^1,3 (1.Kyushu Univ., 2.IIS Tokyo Univ., 3.RIAM Kyushu Univ.)

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