Equipment technology

2:15 PM - 2:30 PM

[19p-E304-3] Development of Minimal Neutral Beam Etching Equipment

〇Daisuke Ohori¹, Shuichi Noda², Yoshiyuki Nozawa³, Bryan Liao³, Ryusuke Fujii³, Toshihiro Hayami³, Mikio Kadoi⁴, Teruhisa Ishida⁵, Mami Tanaka⁵, Masahiro Sota⁵, Kazuhiko Endo^1,2, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIST, 3.SPT Co., Ltd., 4.LTJ Corp., 5.NAGASE & CO., LTD.)

Wed. Sep 18, 2019 1:15 PM - 5:00 PM B11 (B11)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[18p-B11-1~14] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:15 PM - 4:30 PM

[18p-B11-12] Investigation of Atomic-layer Defect-free Ge Etching by HBr Neutral Beam

〇Daisuke Ohori¹, Takuya Fujii¹, Shuichi Noda², Wataru Mizubayashi², Kazuhiko Endo^1,2, Yiming Li⁴, Yao-Jen Lee⁵, Takuya Ozaki¹, Seiji Samukawa^1,2,3 (1.IFS, Tohoku Univ., 2.AIST, 3.AIMR, Tohoku Univ., 4.NCTU, 5.NDL)

Wed. Sep 18, 2019 1:15 PM - 5:00 PM E214 (E214)

Oral presentation
| Joint Session M
| 22.1 Joint Session M "Phonon Engineering"

[18p-E214-1~13] 22.1 Joint Session M "Phonon Engineering"

3:15 PM - 3:30 PM

[18p-E214-8] Independent Control of Thermal Conductivity and Electrical Conductivity by change of Si nanopillar spacingc

〇(PC)Daisuke Ohori¹, Hidesato Kuboyama⁴, Masayuki Murata³, Atsushi Yamamoto³, Masahiro Nomura⁵, Kazuhiko Endo^1,3, Seiji Samukawa^1,2,3 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.TUS, 5.IIS Univ. of Tokyo)