Hiroki Nagakura

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:30 PM - 3:00 PM C212 (C212)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

2:45 PM - 3:00 PM

[18p-C212-6] First-principles analysis on the behavior of metal atom near dopant complex in Si crystal

〇Hiroki Nagakura^1,2, Koji Sueoka³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)