Takashi Nishitani

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

5:15 PM - 5:30 PM

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

〇(M2)Takashi Nishitani¹, Shunsuke Kamiya¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)