Tatsuhiko Nishimura

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 12:15 PM E303 (E303)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:15 AM - 10:30 AM

[18a-E303-6] A study on mechanisms of laser THz emission at MOS interface
- Separation of the surface electric field and the photo-Dember effect -

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1.SCREEN, 2.ILE, Osaka Univ., 3.Graduate School of Eng., Osaka Univ.)

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