Masanori Nagase

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:30 AM - 11:30 AM PB3 (PB)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-PB3-1~47] 15.4 III-V-group nitride crystals

9:30 AM - 11:30 AM

[18a-PB3-13] Evaluation of nonvolatile memory characteristics using GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)