FEI MO

Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:15 PM - 5:00 PM B11 (B11)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[18p-B11-1~14] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

1:30 PM - 1:45 PM

▲ [18p-B11-2] Demonstration of HfO₂ based Ferroelectric FET with Ultrathin-body IGZO for High-Density Memory Application

〇(D)FEI MO¹, Yusaku Tagawa², Chengji Jin¹, MinJu Ahn¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, the Univ. of Tokyo, 2.The Univ. of Tokyo)