Hirofumi Nishida

→ Search for Hirofumi Nishida in Google Scholar

Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

1:30 PM - 1:45 PM

[18p-N302-3] Evaluation of trap density in GaN by transient current
measurement upon step voltage application

〇Hirofumi Nishida¹, Takuya Hoshii¹, Hiroaki Kataoka¹, Kazuo Tsutsui², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)