Ki Ando

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB5 (PB)

Poster presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 6:00 PM

[18p-PB5-30] Properties of highly oriented SnO₂ layer grown by UHV sputter epitaxy method

〇Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)