MACIEJ FRANCISZEK MATYS

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

▲ [19a-E301-6] Improvement of breakdown voltage of GaN-on-GaN p-n Junction Diodes with Shallow Bevel Termination for High Power Applications

〇MACIEJ FRANCISZEK MATYS¹, Takashi Ishida^1,2, Tetsu Kachi¹ (1.Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan, 2.Toyota Motor Corporation, Japan, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan)

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