Ryo Fujishima

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 11:45 AM E310 (E310)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19a-E310-1~10] 15.4 III-V-group nitride crystals

11:30 AM - 11:45 AM

[19a-E310-10] Response characteristics of AlGaN/GaInN/GaN HFET-type visible photosensors

〇(M1)Ryo Fujishima¹, Megumi Sakata¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center,Nagoya Univ.)

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