Ployrung Kesorn

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM B31 (B31)

Oral presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM

▼ [20a-B31-10] Effect of Solution Processed High-k Hybrid Gate Insulator Film Curing Temperature on Amorphous In-Ga-Zn-O Thin-Film Transistors Performance

〇Ployrung Kesorn¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami N. Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Merck Performance Material Ltd.)

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