Riku Kobayashi

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM B31 (B31)

Oral presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM

△ [20a-B31-9] Characteristics of oxide TFT using carbon-doped In₂O₃ thin films
by low-temperature ALD

〇Riku Kobayashi^1,2, Toshihide Nabatame², Kazunori Kurishima^2,3, Takashi Onaya^1,2,4, Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Kazuhito Tsukagoshi², Atsushi Ogura¹ (1.Meiji Univ., 2.WPI-MANA NIMS, 3.JSPS Research Fellow PD, 4.JSPS Research Fellow DC)