Ryosuke Murase

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[20a-E301-3] Temperature Coefficients of Schottky Barrier Heights for Homoepitaxial n-Type GaN SBDs with Various Metals and Impact of Thermal Treatment

〇Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae^1,2, Jun Suda^1,3, Masahiro Horita^1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS)