Ryo Kamoshida

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[20a-E301-5] Analysis of Interface-State Admittance of MOS Diodes Constructed of Mg-Ion-Implanted GaN

〇(M2)Ryo Kamoshida¹, Shunta Murai¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)