10:45 AM - 11:00 AM
[20a-E301-7] Influence of GaN/HfSiOx interface on electrical properties for GaN/HfSiOx/Pt capacitors
〇Erika Maeda1,2, Toshihide Nabatame2, Masafumi Hirose1,2, Mari Inoue2, Akihiko Ohi2, Naoki Ikeda2, Koji Shiozaki3, Hajime Kiyono1 (1.SIT, 2.NIMS, 3.NU)