Keito Aoshima

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

△ [20a-E301-9] Thickness dependence of flat band voltage shift induced by gamma-ray irradiation in Al₂O₃/GaN MOS diodes with PMA

〇Keito Aoshima¹, Masahiro Horita^1,2, Shota Kaneki³, Jun Suda^1,2, Tamotsu Hashizume³ (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.RCIQE, Hokkaido Univ.)