Tetsuo Hatakeyama

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

11:30 AM - 11:45 AM

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers

〇Tetsuo Hatakeyama^1,2, Mitsuru Sometani², Hirohisa Hirai², Shinsuke Harada² (1.Toyama Pref. Univ., 2.AIST)