Hiroki Nemoto

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

〇Hiroki Nemoto¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

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