Takuma Narahara

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

5:30 PM - 5:45 PM

[20p-E311-15] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

〇(M1)Takuma Narahara^1,2, Shinichiro Sato², Kazutoshi Kojima³, Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.AIST)