Symposium (Oral)

Symposium (technical) » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

[18p-E101-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

Wed. Sep 18, 2019 1:30 PM - 5:30 PM E101 (E101)

Hideki Hirayama(RIKEN), Yasuo Koide(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[18p-E101-1] Progress and issues of GaN MOSFETs using ion implantation process

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Masaharu Edo¹, Kazutaka Mitsuishi², Jun Uzuhashi², Tadakatsu Ohkubo², Kazuhiro Hono², Jun Chen², Takashi Sekiguchi², Yoshihiro Irokawa², Toshihide Nabatame², Yasuo Koide² (1.Fuji Electric, 2.NIMS)

2:00 PM - 2:30 PM

[18p-E101-2] Advanced device technologies for high-frequency GaN HEMTs

〇Shiro Ozaki^1,2, Kozo Makiyama^1,2, Toshihiro Ohki^1,2, Yusuke Kumazaki^1,2, Yoshitaka Niida^1,2, Masaru Sato^1,2, Yuichi Minoura^1,2, Atsushi Yamada^1,2, Junji Kotani^1,2, Naoya Okamoto^1,2, Norikazu Nakamura^1,2 (1.Fujitsu, 2.Fujitsu Labs.)

2:30 PM - 3:00 PM

[18p-E101-3] Nanolaminate Singularity Structure Diamond Devices

〇Yasuo Koide¹, Masataka Imura¹, Jianwei Liu¹, Meiyong Liao¹ (1.NIMS)

3:00 PM - 3:30 PM

[18p-E101-4] Towards GaN Nanowire-based Vertical FETs

〇Junichi Motohisa¹ (1.Hokkaido Univ.)

4:00 PM - 4:30 PM

▲ [18p-E101-5] Recent progress and future of GaN and GaAs-based THz-QCL

〇Ke Wang^1,2, Li Wang², Tsung Tse Lin², K Fukuda², Hideki Hirayama² (1.Nanjing Univeristy, 2.RIKEN, RAP)

4:30 PM - 5:00 PM

[18p-E101-6] Progress and Prospect of GaN-based Vertical-Cavity Surface-Emitting Lasers

〇Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

5:00 PM - 5:30 PM

[18p-E101-7] Development of Novel Wavelength Converters Made of Widegap Semiconductors: Polarity-Inverted Waveguide and Microcavity

〇Ryuji Katayama¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹ (1.Osaka Univ.)

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