Shinya Takashima

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:30 PM - 5:30 PM E101 (E101)

Symposium (Oral)
| Symposium (technical)
| Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

[18p-E101-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

1:30 PM - 2:00 PM

[18p-E101-1] Progress and issues of GaN MOSFETs using ion implantation process

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Masaharu Edo¹, Kazutaka Mitsuishi², Jun Uzuhashi², Tadakatsu Ohkubo², Kazuhiro Hono², Jun Chen², Takashi Sekiguchi², Yoshihiro Irokawa², Toshihide Nabatame², Yasuo Koide² (1.Fuji Electric, 2.NIMS)

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