[19a-PA3-1~10] 3.13 Semiconductor optical devices

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[19a-PA3-1] Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded

〇Xu Han¹, Masaki Matsuura¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-2] Temperature dependence of GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Takahiro Ishizaki¹, Xu Han¹, Masaki Matsuura¹, Koki Tsushima¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia University)

9:30 AM - 11:30 AM

[19a-PA3-3] PL characteristics of InAs QDs structure grown on directly bonded InP/Si and InP substrate

〇Takuto Shirai¹, Xu Han¹, Masaki Matsuura¹, Takahiro Ishizaki¹, Koki Tsushima¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-4] Optical gain characterization of self-assembled InAs QDs for swept source applications

〇Toshiya Tsuji¹, Katsuya Onoue¹, Daigo Ikuno¹, Nobuhiko Ozaki¹, Hirotaka Ohsato², Eiichiro Watanabe², Naoki Ikeda², Yoshimasa Sugimoto², D. T. D. Childs³, R. A. Hogg³ (1.Wakayama Univ., 2.NIMS, 3.Univ. Glasgow)

9:30 AM - 11:30 AM

[19a-PA3-5] Photoluminescence spectroscopy of selective MOVPE growth of GaInAs/InP MQW structure
on wafer bonded InP/Si substrate

〇Koki Tsushima¹, Takahiro Ishizaki¹, Xu Han¹, Masaki Matsuura¹, Takuto Shirai¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-6] Improvement of efficiency of ZnO nanoparticle LEDs by localized surface plasmon resonance

〇Atsuya Tabuchi¹, Islam Md Shafiqul², Jie Lin³, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&technol., 2.Shimane Univ. Sci&Eng., 3.SNCC Co., Ltd.)

9:30 AM - 11:30 AM

[19a-PA3-7] Mode calculation of optical microcavity with tilted mirrors

〇Yuma Kitagawa¹, Yuta Suzuki¹, Shin-ichirou Tezuka¹ (1.Yokogawa electric corporation)

9:30 AM - 11:30 AM

[19a-PA3-8] Fabrication and evaluation of GaAs and InGaP photovoltaic devices for Optical Wireless Power Transmission

〇Shinnosuke Tsuboyama¹, Kensuke Hiwada¹, Masakazu Arai¹, Kouji Maeda¹ (1.Miyazaki Univ.)

9:30 AM - 11:30 AM

[19a-PA3-9] Crystalline Selenium-Based Stacked Pixel-Parallel CMOS Image Sensor Suitable for Single-Photon Counting

〇Masahide Goto¹, Shigeyuki Imura¹ (1.NHK STRL)

9:30 AM - 11:30 AM

[19a-PA3-10] Defect level estimation in chlorine-terminated hexagonal selenium thin-film

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Misao Kubota¹ (1.NHK STRL)

Session information

[19a-PA3-1~10] 3.13 Semiconductor optical devices

[19a-PA3-1] Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded

[19a-PA3-2] Temperature dependence of GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

[19a-PA3-3] PL characteristics of InAs QDs structure grown on directly bonded InP/Si and InP substrate

[19a-PA3-4] Optical gain characterization of self-assembled InAs QDs for swept source applications

[19a-PA3-5] Photoluminescence spectroscopy of selective MOVPE growth of GaInAs/InP MQW structure
on wafer bonded InP/Si substrate

[19a-PA3-6] Improvement of efficiency of ZnO nanoparticle LEDs by localized surface plasmon resonance

[19a-PA3-7] Mode calculation of optical microcavity with tilted mirrors

[19a-PA3-8] Fabrication and evaluation of GaAs and InGaP photovoltaic devices for Optical Wireless Power Transmission

[19a-PA3-9] Crystalline Selenium-Based Stacked Pixel-Parallel CMOS Image Sensor Suitable for Single-Photon Counting

[19a-PA3-10] Defect level estimation in chlorine-terminated hexagonal selenium thin-film

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