Session information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PB5 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[19a-PB5-1] Evaluation of GaAsN using photoconductivity measurements at room temperature

〇Koichiro Shimizu¹, Kojiro Otake¹, Takashi Tsukasaki¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

9:30 AM - 11:30 AM

[19a-PB5-2] Evaluation of the localized states in GaAsN using Photoluminescence

〇Kojiro Otake¹, Koichiro Shimizu¹, Takashi Tsukasaki¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

9:30 AM - 11:30 AM

[19a-PB5-3] Investigation on Annihilation of Point Defects in III-V-N Alloys by Proton Irradiation(2)

〇Shigeto Genjo¹, Keisuke Yamane¹, Ryo Futamura¹, Mitsuru Imaizumi², Takeshi Ohshima³, Akihiro Wakahara¹ (1.Toyohashi Univ., 2.JAXA, 3.QST)

9:30 AM - 11:30 AM

△ [19a-PB5-4] The Influence of Annealing Temperature to Evaluation of Electrical Characteristics of GaAsN Films with Intentional Change of N Distribution by Atomic Layer Epitaxy

〇Ryo Minematsu¹, Masahiro Kawano¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

9:30 AM - 11:30 AM

[19a-PB5-5] Spin lifetime measurements by time-resolved luminescence in a nitrogen delta-doped GaAs quantum well

Hideki Kaitsuka¹, 〇Yoshimasa Omata¹, Yoshiki Sakuma², Michio Ikezawa¹ (1.Tsukuba Univ., 2.NIMS)

9:30 AM - 11:30 AM

[19a-PB5-6] Impact of growth temperture on the GaAsBi tail states probed by sub-band absorption and photoluminesence characteristics

〇Sho Hasegawa¹, Junta Matsumura¹, Kyohei Kakuyama¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

9:30 AM - 11:30 AM

[19a-PB5-7] Structural Modifications of GaAs/GaAsBi heterostructured nanowires induced by Bi introduction

〇Kohei Yoshikawa¹, Teruyoshi Matsuda¹, Satoshi Shimomura¹, Fumitaro Ishikawa¹, Kazuki Nagashima², Takeshi Yanagida² (1.Ehime Univ., 2.Kyushu Univ.)

9:30 AM - 11:30 AM

[19a-PB5-8] Influence of Al Irradiation on InSb Dots Density on GaSb Thin Film

〇Takashi Tsuchiya¹, Daichi Fukagawa¹, Ryuto Machida¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ of Science.)

9:30 AM - 11:30 AM

[19a-PB5-9] Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMT Structures

〇Naoyuki Kishimoto¹, Kumasaka Kounosuke¹, Endoh Yuki¹, Hayashi Takuya¹, Hiraoka Mizuho¹, Shirai Shusaku¹, Yoshida Naofumi¹, Machida Ryuto¹, Watanabe Issei², Yamashita Yoshimi², Hara Shinsuke², Gotow Takahiro², Kasamatsu Akifumi², Fujishiro Hiroki¹, Endoh Akira¹ (1.TUS, 2.NICT)

9:30 AM - 11:30 AM

[19a-PB5-10] Influence of Strained-Layer Superlattice Buffer on Surface Morphology and Electron Transport Properties of InSb HEMT Structures

〇Takuya Hayashi¹, Takushi Otsubo¹, Naoyuki Kishimoto¹, Yuki Endoh¹, Mizuho Hiraoka¹, Issei Watanabe², Yoshimi Yamashita², Shinsuke Hara², Takahiro Gotow², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS, 2.NICT)

9:30 AM - 11:30 AM

[19a-PB5-11] Electron Transport properties of Ga_1-xIn_xSb Quantum Well Channel Using Strained-Al_0.40In_0.60Sb/Al_1-yIn_ySb Stepped Buffer

〇Mizuho Hiraoka¹, Yuki Endoh¹, Koki Osawa¹, Naoyuki Kishimoto¹, Takuya Hayashi¹, Ryuto Machida¹, Issei Watanabe², Yoshimi Yamashita², Shinsuke Hara², Takahiro Gotow², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

9:30 AM - 11:30 AM

[19a-PB5-12] Electron Transport Properties of strained Ga1-xInxSb Quantum Well Channel Using Al_0.40In_0.60/Al_0.25In_0.75Sb Stepped Buffer

〇Mizuho Hiraoka¹, Yuki Endoh¹, Naoyuki Kishimoto¹, Takuya Hayashi¹, Yuta Kenmochi¹, Ryuto Machida¹, Issei Watanabe², Yoshimi Yamashita², Shinsuke Hara², Takahiro Gotow², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

9:30 AM - 11:30 AM

△ [19a-PB5-13] Lattice Relaxation Anisotropy of GaAsSb/GaAs(001) with Different Growth Temperatures

〇Koshiro Kubo¹, Syota Nogawa¹, Masahiro Kawano¹, Takuo Sasaki², Masamitu Takahashi², Hidetoshi Suzuki¹ (1.Miyazaki Univ., 2.QST)

9:30 AM - 11:30 AM

[19a-PB5-14] Fabrication of mid-infrared LED using InAs/GaAsSb type-Ⅱ super-lattice structures on InP substrates

〇Ko Uno¹, Naoto Iijima¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

9:30 AM - 11:30 AM

[19a-PB5-15] High-temperature crystallization in droplet epitaxial growth of InAs quantum dot on InP(111)A

〇Takaaki Mano¹, Neul Ha¹, Takashi Kuroda¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

9:30 AM - 11:30 AM

[19a-PB5-16] Crystallinity of recrystallized In_xGa_1-xAs

〇Yukihiro Horita¹, Kentaro Hirayama¹, Yoriko Tominaga¹, Yutaka Ohno², Osamu Ueda³ (1.Hiroshima Univ., 2.IMR, Tohoku Univ., 3.Meiji Univ.)

9:30 AM - 11:30 AM

[19a-PB5-17] Absolute surface energies of AlGaN(0001) using wedge-shape geometry method

〇Katsuya Nagai¹, Shinnosuke Tsumuki¹, Akiyama Toru¹, Abdul Muizz Pradipto¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie univ)

9:30 AM - 11:30 AM

[19a-PB5-18] Theoretical study for the adsorption-desorption behavior at the step-edge of GaN(0001) surfaces during MOVPE growth

〇Takumi Ohka¹, Toru Akiyama¹, Abdul-Muizz Pradipto¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

9:30 AM - 11:30 AM

[19a-PB5-19] MBE growth of AlGaAs superlattice for its application to photocathode

〇(M1)Iori Morita¹, Fumitaro Ishikawa¹, Tomohiro Nishitani², Masao Tabuchi³ (1.Ehime Univ., 2.Nagoya Univ IMaSS., 3.Nagoya Univ SRC.)

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