Session information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[19p-E313-1~9] 15.5 Group IV crystals and alloys

Thu. Sep 19, 2019 1:30 PM - 3:45 PM E313 (E313)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[19p-E313-1] Determination of Ge Fraction Using Local Vibrational Modes in Raman Spectra of Ge-rich SiGe

〇Ryo Yokogawa^1,2, Haruki Takeuchi¹, Kazutoshi Yoshioka¹, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

1:45 PM - 2:00 PM

△ [19p-E313-2] Evaluation of Local Structure of SiGe Thin Film on Si Substrate at Low Temperature using XAFS Measurement

〇Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Yuki Takahashi¹, Haruki Takeuchi¹, Ichiro Hirosawa³, Takeshi Watanabe³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.JASRI)

2:00 PM - 2:15 PM

△ [19p-E313-3] Depth-resolved nanobeam X-ray diffraction analysis on a high-Ge-content SiGe film with a compositionally graded layer on a Si substrate

〇Kazuki Shida¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Akira Sakai¹ (1.Osaka Univ., 2.JASRI)

2:15 PM - 2:30 PM

[19p-E313-4] Critical thickness of strained Si_1-xGe_x on Ge-on-Si(111) and Ge(111) substrates

〇Youya Wagatsuma¹, Md. M. Alam¹, Kazuya Okada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Advanced Research Laboratories, Tokyo City Univ., 2.Grad. Sch. Eng. Sci., Osaka Univ., 3.CSRN, Osaka Univ.)

2:30 PM - 2:45 PM

△ [19p-E313-5] Study on critical thickness of SiGe on Si(110) substrate

〇(M2)Shingo Saito¹, Yuichi Sano¹, Keisuke Arimot¹, Junji Yamanaka¹, Kosuke o. Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ.)

2:45 PM - 3:00 PM

[19p-E313-6] Effects of insertion of diffusion stop layer into P-doped Ge-on-Si

〇(M1)Kodai Yamada¹, Yuta Kumazawa¹, Takuya Maruizumi¹, Kentaro Sawano¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

[19p-E313-7] Control of n-type conduction in Ge-on-Si (111) by in-situ doping

〇Toshiki Mizuguchi¹, Shuichirou Ohshima¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:15 PM - 3:30 PM

△ [19p-E313-8] Hall mobility evaluation of inversion carriers in strained Si/relaxed SiGe/Si(110) heterostructures

〇(M2)Daichi Namiuchi¹, Kentarou Sawano², Atsushi Onogawa¹, Yuuichi Sano¹, Daisuke Izumi¹, Keisuke Arimoto¹, Jyunji Yamanaka¹, Kosuke Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

3:30 PM - 3:45 PM

△ [19p-E313-9] Dependence of field effect mobility of strained Si/relaxed SiGe/Si(110) p-MOSFET on strained Si layer thickness

〇(B)Taisuke Fujisawa¹, Astushi Onogawa¹, Daichi Namiuchi¹, Shingo Saito¹, Yuichi Sano¹, Daisuke Izumi¹, Junji Yamanaka¹, Kosuke Hara¹, Kentaro Sawano², Kiyokazu Nakagawa¹, Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

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