一般セッション(口頭講演)

コードシェアセッション » 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

2019年9月20日(金) 10:45 〜 12:30 E216 (E216)

谷口知大(産総研)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
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10:45 〜 11:00

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

〇Shinji Isogami¹、Youhei Shiokawa²、Atsushi Tsumita²、Tomohiro Taniguchi³、Seiji Mitani¹、Tomoyuki Sasaki²、Masamitsu Hayashi^1,4 (1.NIMS、2.TDK、3.AIST、4.Univ. of Tokyo)

11:00 〜 11:15

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

〇(D)Miao JIANG¹、Hirokatsu Asahara¹、Shoichi Sato¹、Shinobu Ohya^1,2,3、Masaaki Tanaka^1,2 (1.Dept. of Electrical Engineering, The Univ. of Tokyo、2.CSRN, Graduate School of Engineering, The Univ. of Tokyo、3.Institute of Engineering Innovation, Graduate School of Engineering, The Univ. of Tokyo)

11:15 〜 11:30

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

〇(M1)Vihanga Zoysa¹、Ryuuichi Itoh¹、Yutara Takeuchi¹、Samik DuttaGupta^1,2,3、Shunsuke Fukami^1,2,3,4,5、Hideo Ohno^1,2,3,4,5 (1.RIEC, Tohoku Univ.、2.CSIS, Tohoku Univ.、3.CSRN, Tohoku Univ.、4.CIES, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ.)

11:30 〜 11:45

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

〇(M2)Fumiaki Shimohashi¹、Bao Nguyen¹、Michihiko Yamanouchi²、Tetsuya Uemura¹ (1.IST, Hokkaido Univ.、2.RIES, Hokkaido Univ.)

11:45 〜 12:00

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

〇Daichi Sugawara¹、Shutaro Karube¹、Makoto Kohda¹、Junsaku Nitta¹ (1.Tohoku Univ)

12:00 〜 12:15

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

〇Samik Duttagupta^1,2,3、Aleksandr Kurenkov^1,2,3、Oleg Tretiakov⁶、Gunasheel Krishnaswamy⁷、Giacomo Sala⁷、Viola Krizakova⁷、Francesco Maccherozzi⁸、Sarnjeet Dhesi⁸、Pietro Gambardella⁷、Shunsuke Fukami^1,2,3,4,5、Hideo Ohno^1,2,3,4,5 (1.CSIS, Tohoku Univ.、2.CSRN, Tohoku Univ.、3.RIEC, Tohoku Univ.、4.CIES, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ.、6.School of Physics, UNSW、7.D-MAT, ETH Zurich、8.Diamond Light Source)

12:15 〜 12:30

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

〇Namhai Pham^1,2,3、Huynh Duy Khang Nguyen¹、Takanori Shirokura¹ (1.Tokyo Tech、2.Univ. Tokyo、3.JST-CREST)

セッション情報

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

認証

セッション情報

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt1-xMnx/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO2

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

認証

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂