[20a-E310-1~10] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 9:00 AM - 11:45 AM E310 (E310)

Kazunobu Kojima(Tohoku Univ.), Mark Holmes(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E310-1] Phonon transport evaluation of InGaN by mapping of Raman peak energy shift

〇Shungo Okamoto¹, Bei Ma¹, Ken Morita¹, Daisuke Iida Iida², Kazuhiro Ohkawa², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.King Abdullah Univ.)

9:15 AM - 9:30 AM

[20a-E310-2] Micro-Photoluminescence Mapping of Surface Plasmon Enhanced Emissions from polar/semipolar InGaN/GaN

〇Jun Kametani¹, Toshiki Nakamura¹, Fumiya Murao¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

9:30 AM - 9:45 AM

[20a-E310-3] Scanning near-field optical microscopy of green-emitting InGaN/GaN multiple quantum wells with different glowth conditions

〇Ryoga Makio¹, Junji Gao¹, Naoya Hayashi¹, Shota Yuasa¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoshiki Yano², Toshiya Tabuchi², Koh Matsumoto², Yoichi Yamada¹ (1.Yamaguchi Univ., 2.TAIYO NIPPON SANSO Corp.)

9:45 AM - 10:00 AM

[20a-E310-4] Micro-photoluminescence mapping of blue- and green-emitting InGaN quantum wells at high temperatures

〇Ryota Ishii¹, Yuji Koyama¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[20a-E310-5] Fitting analysis of internal quantum efficiency curves in green InGaN based quantum well structures.

〇Yuki Hashiguchi¹, Yuji Nagami¹, Keigo Nakatsuru¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Hideaki Murotani², Yoshiki Yano³, Toshiya Tabuchi³, Koh Matsumoto³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT,Tokuyama Coll., 3.TAIYO NIPPON NISSAN corp.)

10:30 AM - 10:45 AM

[20a-E310-6] Measurements of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Spectroscopy

〇Keito Mori¹, Yuchi Takahashi¹, Atsushi Yamaguchi¹, Susumu Kusanagi², Yuya Kanitani², Yoshihiro Kudo², Shigetaka Tomiya² (1.Kanazawa Inst. of Tech., 2.SONY Corp.)

10:45 AM - 11:00 AM

▼ [20a-E310-7] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling.

〇(P)Anna Kafar^1,2, Ryota Ishii¹, Szymon Stanczyk², Krzysztof Gibasiewicz², Szymon Grzanka^2,3, Tadeusz Suski², Piotr Perlin^2,3, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.IHPP PAS, 3.TopGaN Ltd.)

11:00 AM - 11:15 AM

△ [20a-E310-8] Investigation of surface plasmon coupling around nanocolumn lateral surfaces toward plasmonic LEDs with high emission efficiencies

〇(M1)Michitaka Oigawa¹, Koichi Okamoto², Rie Togashi³, Katsumi Kishino⁴, Takao Oto¹ (1.Yamagata Univ., 2.Osaka Pref.Univ., 3.Sophia Univ., 4.Sophia Nanotech.)

11:15 AM - 11:30 AM

△ [20a-E310-9] Red emission enhancement from InGaN using nanocolumn plasmonic crystals with honeycomb and kagome lattices

〇(M1)Aoto Aihara¹, Kazuma Kikuchi², Koichi Okamoto⁴, Rie Togashi², Katsumi Kishino^2,3, Takao Oto¹ (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Nanotech., 4.Osaka Pref. Univ.)

11:30 AM - 11:45 AM

[20a-E310-10] High aspect nano-hole array fabricated by HEATE for InGaN/GaN optical waveguide type photonic crystal device

〇Yuta Moriya¹, Yuki Ooe¹, Yusei Kawasaki¹, Daichi Ito¹, Kouki Abe¹, Kentarou Kinoshita¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Photonics Reserch Center)

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