Anna Kafar

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 11:45 AM E310 (E310)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20a-E310-1~10] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM

▼ [20a-E310-7] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling.

〇(P)Anna Kafar^1,2, Ryota Ishii¹, Szymon Stanczyk², Krzysztof Gibasiewicz², Szymon Grzanka^2,3, Tadeusz Suski², Piotr Perlin^2,3, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.IHPP PAS, 3.TopGaN Ltd.)

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