Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 9:00 AM - 11:15 AM B31 (B31)

Tomoki Abe(Tottori Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-B31-1] The effect of grain boundary on carrier transport in transparent and conductive polycrystalline oxide thin films

〇Tadatsugu Minami¹ (1.OEDS R&D Center, KIT)

9:15 AM - 9:30 AM

[21a-B31-2] Reactive-ion etching damage of ZnO and recovery by HCl dipping

〇Taizo Nakasu¹, Kohei Shima¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

9:30 AM - 9:45 AM

[21a-B31-3] Characterization of TiO₂ thin film photocatalyst prepared by rf-magnetron sputtering

Rahul Deshmukh¹, 〇Mitsuhiro Honda¹, Koji Abe¹, Kesuke Gotoh¹, Shinji Takayanagi^1,3, Yoshimi Horio², Yo Ichikawa¹ (1.Nitech, 2.Daido Univ., 3.Doshisha Univ.)

9:45 AM - 10:00 AM

[21a-B31-4] Preparation of Sn based conductive film and its characteristics by Mist CVD

〇(M2)Mariko Ueda¹, Li Liu¹, Giang T. Dang¹, Tomoko Kozaki², Hiroshi Yanagimoto², Toshiyuki Kawaharamura¹ (1.School of Intelligent. Mech. Sys. Eng. Kochi Univ. of Tech., 2.Toyota Motor Corporation)

10:15 AM - 10:30 AM

[21a-B31-5] Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

〇Makoto Minohara¹, Naoto Kikuchi¹, Yoshiyuki Yoshida¹, Hiroshi Kumigashira^2,3, Yoshihiro Aiura¹ (1.AIST, 2.KEK, 3.Tohoku Univ.)

10:30 AM - 10:45 AM

[21a-B31-6] In-situ observation of crystallization of amorphous Sn-doped In₂O₃ films

〇Yutaka Furubayashi¹, Shintaro Kobayashi², Makoto Maehara³, Hisashi Kitami^1,3, Toshiyuki Sakemi³, Katsuhiko Inaba², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Rigaku Corp., 3.Sumitomo Heavy Industries, Ltd.)

10:45 AM - 11:00 AM

[21a-B31-7] High Hall mobility of W-doped In₂O₃ ultra-thin films grown by reactive plasma deposition

〇Yutaka Furubayashi¹, Makoto Maehara², Hisashi Kitami^1,2, Toshiyuki Sakemi², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.SHI, Ltd.)

11:00 AM - 11:15 AM

[21a-B31-8] Influence of Indium-precursors on Halide Vapor Phase Epitaxy of In₂O₃

〇Kenta Nagai¹, Nami Tanaka¹, Yuya Saimoto¹, Rie Togashi², Nao Takekawa¹, Ken Goto¹, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Sophia Univ., 3.TUAT IGIR)

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